The research team developed greatly enhances the efficiency of non-polar GaN LED

Scientist Shuji Nakamura, Steven DenBaars the auspices of the University of California, Santa Barbara (University of California, Santa Barbara; UCSB) non-polar GaN materials research team has announced the team developed a blue-violet InGaN LED, in200mA high current 250mW output power to create a new record high, with 41% external quantum efficiency (EQE). The results of the team is to make this LED 20mA of current, output power up to 28mW, then wavelengths up to 402nm, the suits the quantum efficiency of 45.4%, followed by the current to 200mA when the output power of 250mW the external quantum efficiency is only a slight decline in the extent of 41%. Been over-taken, through growth to build non-polar GaN LED as a means to improve performance, but at present the non-polar GaN candle light efficiency are less favorable than the traditional architecture of the LED panel light, the research team provided by Mitsubishi Chemical m-plane GaN substrate, which is the main reason for this study to obtain breakthrough results. Mitsubishi Chemical generated C-plane GaN by the HVPE method was sliced to obtain an m-plane GaN substrate. The research team is still working to build a more performance technology, and have already started to work through the standard process to build a new chip, and to try to improve product efficiency. However, it is commercialized, have to overcome the yield and the price of the m-plane GaN substrate, coupled with the very small size of the m-plane GaN substrate, how to apply the conventional MOCVD equipment to build, but not so cost is too high, is to be to overcome the problem.